Images are for reference only.
See Product Specifications for product details.
| Part Number | APT150GN60LDQ4G |
|---|---|
| Part Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 220A |
| Current - Collector Pulsed (Icm) | 450A |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 150A |
| Power - Max | 536W |
| Switching Energy | 8.81mJ (on), 4.295mJ (off) |
| Input Type | Standard |
| Gate Charge | 970nC |
| Td (on/off) @ 25°C | 44ns/430ns |
| Test Condition | 400V, 150A, 1 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Supplier Device Package | TO-264 [L] |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
APT150GN120J | Microsemi Corporation | IGBT 1200V 215A 625W SOT227 | - | 21 | Details |
 |
APT150GN120JDQ4 | Microsemi Corporation | IGBT 1200V 215A 625W SOT227 | - | 96 | Details |
 |
APT150GN60B2G | Microsemi Corporation | IGBT 600V 220A 536W SOT227 | - | 19 | Details |
 |
APT150GN60J | Microsemi Corporation | IGBT 600V 220A 536W SOT227 | - | 16 | Details |
 |
APT150GN60JDQ4 | Microsemi Corporation | IGBT 600V 220A 536W SOT227 | - | 15 | Details |
 |
APT150GN60LDQ4G | Microsemi Corporation | IGBT 600V 220A 536W TO-264L | - | 0 | Details |
 |
APT150GT120JR | Microsemi Corporation | IGBT 1200V 170A 830W SOT227 | - | 29 | Details |
 |
APT15D100BCTG | Microsemi Corporation | DIODE ARRAY GP 1000V 15A TO247 | - | 0 | Details |
 |
APT15D100BG | Microsemi Corporation | DIODE GEN PURP 1KV 15A TO247 | - | 14 | Details |
 |
APT15D100BHBG | Microsemi Corporation | DIODE ARRAY GP 1000V 15A TO247 | - | 0 | Details |
 |
APT15D100KG | Microsemi Corporation | DIODE GEN PURP 1KV 15A TO220 | - | 509 | Details |
 |
APT15D120BCTG | Microsemi Corporation | DIODE ARRAY GP 1200V 15A TO247 | 0 | Details |