APT150GT120JR

IGBT 1200V 170A 830W SOT227
APT150GT120JR P1
APT150GT120JR P2
APT150GT120JR P1
APT150GT120JR P2
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Microsemi Corporation ~ APT150GT120JR

Part Number
APT150GT120JR
Manufacturer
Microsemi Corporation
Description
IGBT 1200V 170A 830W SOT227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- APT150GT120JR PDF online browsing
Family
Transistors - IGBTs - Modules
  • In Stock : 29 pcs
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Product Parameter

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Part Number APT150GT120JR
Part Status Active
IGBT Type NPT
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 170A
Power - Max 830W
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 150A
Current - Collector Cutoff (Max) 150µA
Input Capacitance (Cies) @ Vce 9.3nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case ISOTOP
Supplier Device Package ISOTOP®

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