MT3S113(TE85L,F)

RF TRANS NPN 5.3V 12.5GHZ SMINI
MT3S113(TE85L,F) P1
MT3S113(TE85L,F) P1
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Toshiba Semiconductor and Storage ~ MT3S113(TE85L,F)

Part Number
MT3S113(TE85L,F)
Manufacturer
Toshiba Semiconductor and Storage
Description
RF TRANS NPN 5.3V 12.5GHZ SMINI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- MT3S113(TE85L,F) PDF online browsing
Family
Transistors - Bipolar (BJT) - RF
  • In Stock : 235214 pcs
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Product Parameter

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Part Number MT3S113(TE85L,F)
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 5.3V
Frequency - Transition 12.5GHz
Noise Figure (dB Typ @ f) 1.45dB @ 1GHz
Gain 11.8dB
Power - Max 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Current - Collector (Ic) (Max) 100mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package S-Mini

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