MT3S111P(TE12L,F)

RF TRANS NPN 6V 8GHZ PW-MINI
MT3S111P(TE12L,F) P1
MT3S111P(TE12L,F) P1
Images are for reference only.
See Product Specifications for product details.

Toshiba Semiconductor and Storage ~ MT3S111P(TE12L,F)

Part Number
MT3S111P(TE12L,F)
Manufacturer
Toshiba Semiconductor and Storage
Description
RF TRANS NPN 6V 8GHZ PW-MINI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- MT3S111P(TE12L,F) PDF online browsing
Family
Transistors - Bipolar (BJT) - RF
  • In Stock : 172183 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number MT3S111P(TE12L,F)
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 6V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 1.25dB @ 1GHz
Gain 10.5dB
Power - Max 1W
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Current - Collector (Ic) (Max) 100mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package PW-MINI

Related Products

All Products