Images are for reference only.
See Product Specifications for product details.
| Part Number | BSC030P03NS3 G |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 25.4A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3.1V @ 345µA |
| Gate Charge (Qg) (Max) @ Vgs | 186nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 15V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) |
| Rds On (Max) @ Id, Vgs | 3 mOhm @ 50A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 |
| Package / Case | 8-PowerTDFN |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
BSC030N03LSGATMA1 | Infineon Technologies | MOSFET N-CH 30V 100A TDSON-8 | - | 20000 | Details |
 |
BSC030N03MSGATMA1 | Infineon Technologies | MOSFET N-CH 30V 100A TDSON-8 | - | 5000 | Details |
 |
BSC030N04NSGATMA1 | Infineon Technologies | MOSFET N-CH 40V 100A TDSON-8 | - | 10000 | Details |
 |
BSC030N08NS5ATMA1 | Infineon Technologies | MOSFET N-CH 80V 100A 8TDSON | 0 | Details | |
 |
BSC030P03NS3 G | Infineon Technologies | MOSFET P-CH 30V 100A TDSON-8 | - | 50000 | Details |
 |
BSC030P03NS3GAUMA1 | Infineon Technologies | MOSFET P-CH 30V 100A TDSON-8 | - | 50346 | Details |
 |
BSC031N06NS3GATMA1 | Infineon Technologies | MOSFET N-CH 60V 100A TDSON-8 | - | 35000 | Details |
 |
BSC032N03S | Infineon Technologies | MOSFET N-CH 30V 50A TDSON-8 | 0 | Details | |
 |
BSC032N03SG | Infineon Technologies | MOSFET N-CH 30V 100A TDSON-8 | 0 | Details | |
 |
BSC032N04LSATMA1 | Infineon Technologies | MOSFET N-CH 40V 21A 8TDSON | 0 | Details | |
 |
BSC032NE2LSATMA1 | Infineon Technologies | MOSFET N-CH 25V 22A TDSON-8 | - | 0 | Details |
 |
BSC034N03LSGATMA1 | Infineon Technologies | MOSFET N-CH 30V 100A TDSON-8 | - | 5000 | Details |