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Ver especificaciones del producto para detalles del producto.
| Número de pieza | BAV101-GS18 |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 100V |
| Corriente - promedio rectificado (Io) | 250mA (DC) |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1V @ 100mA |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 100nA @ 150V |
| Capacitancia @ Vr, F | 1.5pF @ 0V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | DO-213AC, MINI-MELF, SOD-80 |
| Paquete de dispositivo del proveedor | SOD-80 MiniMELF |
| Temperatura de funcionamiento - unión | 125°C (Max) |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
 |
BAV100-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 250MA SOD80 | - | 2500 | Detalles |
 |
BAV100-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 250MA SOD80 | - | 0 | Detalles |
 |
BAV101 L0G | Taiwan Semiconductor Corporation | DIODE GP 250V 200MA MINIMELF | - | 2421329 | Detalles |
|
BAV101 L1G | Taiwan Semiconductor Corporation | DIODE GP 250V 200MA MINIMELF | - | 2656723 | Detalles |
 |
BAV101-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 250MA SOD80 | - | 0 | Detalles |
 |
BAV101-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 250MA SOD80 | - | 0 | Detalles |
 |
BAV102 | Fairchild/ON Semiconductor | DIODE GEN PURP 150V 200MA LL34 | - | 5000 | Detalles |
 |
BAV102,115 | Nexperia USA Inc. | DIODE GEN PURP 150V 250MA LLDS | 0 | Detalles | |
 |
BAV102,135 | Nexperia USA Inc. | DIODE GEN PURP 150V 250MA LLDS | 0 | Detalles | |
 |
BAV102-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 250MA SOD80 | - | 5000 | Detalles |
 |
BAV102-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 250MA SOD80 | - | 0 | Detalles |
 |
BAV102-TP | Micro Commercial Co | DIODE GEN 150V 200MA MINI MELF | - | 0 | Detalles |