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| Número de pieza | GA10JT12-247 |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | - |
| Tecnología | SiC (Silicon Carbide Junction Transistor) |
| Drene a la fuente de voltaje (Vdss) | 1200V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 10A (Tc) |
| Voltaje de conducción (Rds máx. Encendidos, Rds mínimos activados) | - |
| Vgs (th) (Max) @ Id | - |
| Carga de puerta (Qg) (Max) @ Vgs | - |
| Capacitancia de entrada (Ciss) (Max) @ Vds | - |
| Vgs (Max) | - |
| Característica FET | - |
| Disipación de potencia (Máx) | 170W (Tc) |
| Rds On (Max) @ Id, Vgs | 140 mOhm @ 10A |
| Temperatura de funcionamiento | 175°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete de dispositivo del proveedor | TO-247AB |
| Paquete / caja | TO-247-3 |
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