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| Número de pieza | BZT52C6V2TQ-13-F |
|---|---|
| Estado de la pieza | Active |
| Voltaje - Zener (Nom) (Vz) | 6.2V |
| Tolerancia | ±6% |
| Potencia - Max | 300mW |
| Impedancia (Máx.) (Zzt) | 10 Ohm |
| Current - Reverse Leakage @ Vr | 3µA @ 4V |
| Voltaje - Adelante (Vf) (Máx) @ Si | 900mV @ 10mA |
| Temperatura de funcionamiento | -65°C ~ 150°C |
| Tipo de montaje | Surface Mount |
| Paquete / caja | SC-79, SOD-523 |
| Paquete de dispositivo del proveedor | SOD-523 |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
|
BZT52C10 RHG | Taiwan Semiconductor Corporation | DIODE ZENER 10V 500MW SOD123F | - | 1642807 | Detalles |
 |
BZT52C10-13 | Diodes Incorporated | DIODE ZENER 10V 500MW SOD123 | - | 0 | Detalles |
 |
BZT52C10-7 | Diodes Incorporated | DIODE ZENER 10V 500MW SOD123 | - | 0 | Detalles |
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BZT52C10-7-F | Diodes Incorporated | DIODE ZENER 10V 500MW SOD123 | - | 63000 | Detalles |
 |
BZT52C10-E3-08 | Vishay Semiconductor Diodes Division | DIODE ZENER 10V 410MW SOD123 | - | 0 | Detalles |
 |
BZT52C10-E3-18 | Vishay Semiconductor Diodes Division | DIODE ZENER 10V 410MW SOD123 | - | 0 | Detalles |
|
BZT52C10-G RHG | Taiwan Semiconductor Corporation | DIODE ZENER 10V 350MW SOD123 | - | 1636684 | Detalles |
 |
BZT52C10-G3-08 | Vishay Semiconductor Diodes Division | DIODE ZENER 10V 410MW SOD123 | - | 0 | Detalles |
 |
BZT52C10-G3-18 | Vishay Semiconductor Diodes Division | DIODE ZENER 10V 410MW SOD123 | - | 0 | Detalles |
 |
BZT52C10-HE3-08 | Vishay Semiconductor Diodes Division | DIODE ZENER 10V 410MW SOD123 | - | 0 | Detalles |
 |
BZT52C10-HE3-18 | Vishay Semiconductor Diodes Division | DIODE ZENER 10V 410MW SOD123 | - | 0 | Detalles |
 |
BZT52C10-TP | Micro Commercial Co | DIODE ZENER 10V 500MW SOD123 | - | 0 | Detalles |