VS-GT400TH60N

IGBT 600V 530A 1600W DIAP
VS-GT400TH60N P1
VS-GT400TH60N P1
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Vishay Semiconductor Diodes Division ~ VS-GT400TH60N

Part Number
VS-GT400TH60N
Manufacturer
Vishay Semiconductor Diodes Division
Description
IGBT 600V 530A 1600W DIAP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- VS-GT400TH60N PDF online browsing
Family
Transistors - IGBTs - Modules
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Product Parameter

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Part Number VS-GT400TH60N
Part Status Active
IGBT Type Trench
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 530A
Power - Max 1600W
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 400A
Current - Collector Cutoff (Max) 5mA
Input Capacitance (Cies) @ Vce 30.8nF @ 30V
Input Standard
NTC Thermistor No
Operating Temperature 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Double INT-A-PAK (3 + 8)
Supplier Device Package Double INT-A-PAK

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