TSM6502CR RLG

MOSFET N/P-CH 60V 24A/18A 8PDFN
TSM6502CR RLG P1
TSM6502CR RLG P1
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Taiwan Semiconductor Corporation ~ TSM6502CR RLG

Part Number
TSM6502CR RLG
Manufacturer
Taiwan Semiconductor Corporation
Description
MOSFET N/P-CH 60V 24A/18A 8PDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- TSM6502CR RLG PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 245517 pcs
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Product Parameter

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Part Number TSM6502CR RLG
Part Status Active
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 24A (Tc), 18A (Tc)
Rds On (Max) @ Id, Vgs 34 mOhm @ 5.4A, 10V, 68 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.3nC @ 4.5V, 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1159pF @ 30V, 930pF @ 30V
Power - Max 40W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-PDFN (5x6)

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