IPD50R650CE

MOSFET N CH 500V 6.1A PG-TO252
IPD50R650CE P1
IPD50R650CE P1
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Infineon Technologies ~ IPD50R650CE

Part Number
IPD50R650CE
Manufacturer
Infineon Technologies
Description
MOSFET N CH 500V 6.1A PG-TO252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPD50R650CE.pdf IPD50R650CE PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 2500 pcs
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Product Parameter

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Part Number IPD50R650CE
Part Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 6.1A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs(th) (Max) @ Id 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 342pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 47W (Tc)
Rds On (Max) @ Id, Vgs 650 mOhm @ 1.8A, 13V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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