EPC2110ENGRT

TRANS GAN 2N-CH 120V BUMPED DIE
EPC2110ENGRT P1
EPC2110ENGRT P1
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See Product Specifications for product details.

EPC ~ EPC2110ENGRT

Part Number
EPC2110ENGRT
Manufacturer
EPC
Description
TRANS GAN 2N-CH 120V BUMPED DIE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- EPC2110ENGRT PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 25000 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number EPC2110ENGRT
Part Status Active
FET Type 2 N-Channel (Dual) Common Source
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 120V
Current - Continuous Drain (Id) @ 25°C 3.4A
Rds On (Max) @ Id, Vgs 60 mOhm @ 4A, 5V
Vgs(th) (Max) @ Id 2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 60V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

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