EPC2012

TRANS GAN 200V 3A BUMPED DIE
EPC2012 P1
EPC2012 P1
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See Product Specifications for product details.

EPC ~ EPC2012

Part Number
EPC2012
Manufacturer
EPC
Description
TRANS GAN 200V 3A BUMPED DIE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
EPC2012.pdf EPC2012 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 4000 pcs
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Product Parameter

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Part Number EPC2012
Part Status Last Time Buy
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 145pF @ 100V
Vgs (Max) +6V, -5V
FET Feature -
Power Dissipation (Max) -
Rds On (Max) @ Id, Vgs 100 mOhm @ 3A, 5V
Operating Temperature -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die

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