EPC2007C

TRANS GAN 100V 6A BUMPED DIE
EPC2007C P1
EPC2007C P2
EPC2007C P1
EPC2007C P2
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See Product Specifications for product details.

EPC ~ EPC2007C

Part Number
EPC2007C
Manufacturer
EPC
Description
TRANS GAN 100V 6A BUMPED DIE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
EPC2007C.pdf EPC2007C PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 15000 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number EPC2007C
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs(th) (Max) @ Id 2.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 220pF @ 50V
Vgs (Max) +6V, -4V
FET Feature -
Power Dissipation (Max) -
Rds On (Max) @ Id, Vgs 30 mOhm @ 6A, 5V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die Outline (5-Solder Bar)
Package / Case Die

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