GT10G131(TE12L,Q)

IGBT 400V 1W 8-SOIC
GT10G131(TE12L,Q) P1
GT10G131(TE12L,Q) P1
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Toshiba Semiconductor and Storage ~ GT10G131(TE12L,Q)

Part Number
GT10G131(TE12L,Q)
Manufacturer
Toshiba Semiconductor and Storage
Description
IGBT 400V 1W 8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
GT10G131(TE12L,Q).pdf GT10G131(TE12L,Q) PDF online browsing
Family
Transistors - IGBTs - Single
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Product Parameter

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Part Number GT10G131(TE12L,Q)
Part Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) -
Current - Collector Pulsed (Icm) 200A
Vce(on) (Max) @ Vge, Ic 2.3V @ 4V, 200A
Power - Max 1W
Switching Energy -
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C 3.1µs/2µs
Test Condition -
Reverse Recovery Time (trr) -
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package 8-SOP (5.5x6.0)

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