2N5416UA/TR

POWER BJT
2N5416UA/TR P1
2N5416UA/TR P1
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Microsemi Corporation ~ 2N5416UA/TR

Part Number
2N5416UA/TR
Manufacturer
Microsemi Corporation
Description
POWER BJT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- 2N5416UA/TR PDF online browsing
Family
Transistors - Bipolar (BJT) - Single
  • In Stock : 6553 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number 2N5416UA/TR
Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 1A
Voltage - Collector Emitter Breakdown (Max) 300V
Vce Saturation (Max) @ Ib, Ic 2V @ 5mA, 50mA
Current - Collector Cutoff (Max) 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V
Power - Max -
Frequency - Transition -
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Surface Mount
Package / Case 4-SMD, No Lead
Supplier Device Package UA

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