TC58NVG1S3HBAI6

IC EEPROM 2GBIT 25NS 67VFBGA
TC58NVG1S3HBAI6 P1
TC58NVG1S3HBAI6 P1
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Toshiba Semiconductor and Storage ~ TC58NVG1S3HBAI6

Part Number
TC58NVG1S3HBAI6
Manufacturer
Toshiba Semiconductor and Storage
Description
IC EEPROM 2GBIT 25NS 67VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- TC58NVG1S3HBAI6 PDF online browsing
Family
Memory
  • In Stock : 225 pcs
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Product Parameter

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Part Number TC58NVG1S3HBAI6
Part Status Active
Memory Type Non-Volatile
Memory Format EEPROM
Technology EEPROM - NAND
Memory Size 2Gb (256M x 8)
Clock Frequency -
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Memory Interface Parallel
Voltage - Supply 2.7 V ~ 3.6 V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 67-VFBGA
Supplier Device Package 67-VFBGA (6.5x8)

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