TC58NVG0S3HBAI4

IC EEPROM 1GBIT 25NS 63TFBGA
TC58NVG0S3HBAI4 P1
TC58NVG0S3HBAI4 P1
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Toshiba Semiconductor and Storage ~ TC58NVG0S3HBAI4

Part Number
TC58NVG0S3HBAI4
Manufacturer
Toshiba Semiconductor and Storage
Description
IC EEPROM 1GBIT 25NS 63TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- TC58NVG0S3HBAI4 PDF online browsing
Family
Memory
  • In Stock : 181 pcs
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Product Parameter

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Part Number TC58NVG0S3HBAI4
Part Status Active
Memory Type Non-Volatile
Memory Format EEPROM
Technology EEPROM - NAND
Memory Size 1Gb (128M x 8)
Clock Frequency -
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Memory Interface Parallel
Voltage - Supply 2.7 V ~ 3.6 V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 63-VFBGA
Supplier Device Package 63-TFBGA (9x11)

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