NGTB10N60R2DT4G

IGBT 10A 600V DPAK
NGTB10N60R2DT4G P1
NGTB10N60R2DT4G P1
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ON Semiconductor ~ NGTB10N60R2DT4G

Part Number
NGTB10N60R2DT4G
Manufacturer
ON Semiconductor
Description
IGBT 10A 600V DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NGTB10N60R2DT4G PDF online browsing
Family
Transistors - IGBTs - Single
  • In Stock : 15000 pcs
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Product Parameter

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Part Number NGTB10N60R2DT4G
Part Status Active
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 20A
Current - Collector Pulsed (Icm) 40A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 10A
Power - Max 72W
Switching Energy 412µJ (on), 140µJ (off)
Input Type Standard
Gate Charge 53nC
Td (on/off) @ 25°C 48ns/120ns
Test Condition 300V, 10A, 30 Ohm, 15V
Reverse Recovery Time (trr) 90ns
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK

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