PMDPB38UNE,115

MOSFET 2N-CH 20V 4A HUSON6
PMDPB38UNE,115 P1
PMDPB38UNE,115 P1
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NXP USA Inc. ~ PMDPB38UNE,115

Part Number
PMDPB38UNE,115
Manufacturer
NXP USA Inc.
Description
MOSFET 2N-CH 20V 4A HUSON6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- PMDPB38UNE,115 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number PMDPB38UNE,115
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 46 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 268pF @ 10V
Power - Max 510mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Supplier Device Package DFN2020-6

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