A2G35S200-01SR3

AIRFAST RF POWER GAN TRANSISTOR
A2G35S200-01SR3 P1
A2G35S200-01SR3 P1
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See Product Specifications for product details.

NXP USA Inc. ~ A2G35S200-01SR3

Part Number
A2G35S200-01SR3
Manufacturer
NXP USA Inc.
Description
AIRFAST RF POWER GAN TRANSISTOR
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- A2G35S200-01SR3 PDF online browsing
Family
Transistors - FETs, MOSFETs - RF
  • In Stock : 533 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number A2G35S200-01SR3
Part Status Active
Transistor Type LDMOS
Frequency 3.4GHz ~ 3.6GHz
Gain 16.1dB
Voltage - Test 48V
Current Rating -
Noise Figure -
Current - Test 291mA
Power - Output 180W
Voltage - Rated 125V
Package / Case NI-400S-2S
Supplier Device Package NI-400S-2S

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