IXTP08N100D2

MOSFET N-CH 1000V 0.8A TO220AB
IXTP08N100D2 P1
IXTP08N100D2 P1
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IXYS ~ IXTP08N100D2

Part Number
IXTP08N100D2
Manufacturer
IXYS
Description
MOSFET N-CH 1000V 0.8A TO220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXTP08N100D2 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 396 pcs
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Product Parameter

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Part Number IXTP08N100D2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 800mA (Tc)
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 14.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 25V
Vgs (Max) ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 60W (Tc)
Rds On (Max) @ Id, Vgs 21 Ohm @ 400mA, 0V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

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