IXTP02N120P

MOSFET N-CH 1200V 0.2A TO-220
IXTP02N120P P1
IXTP02N120P P1
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IXYS ~ IXTP02N120P

Part Number
IXTP02N120P
Manufacturer
IXYS
Description
MOSFET N-CH 1200V 0.2A TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXTP02N120P PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IXTP02N120P
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 200mA (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 104pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 33W (Tc)
Rds On (Max) @ Id, Vgs 75 Ohm @ 100mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

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