Images are for reference only.
See Product Specifications for product details.
| Part Number | IPDD60R190G7XTMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 4.2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 210µA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 718pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 76W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HDSOP-10-1 |
| Package / Case | 10-PowerSOP Module |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
|
IPDD60R050G7XTMA1 | Infineon Technologies | MOSFET NCH 650V 135A PG-HDSOP-10 | - | 11529 | Details |
|
IPDD60R080G7XTMA1 | Infineon Technologies | MOSFET NCH 650V 83A PG-HDSOP-10 | - | 17630 | Details |
|
IPDD60R102G7XTMA1 | Infineon Technologies | MOSFET NCH 650V 66A PG-HDSOP-10 | - | 22235 | Details |
|
IPDD60R125G7XTMA1 | Infineon Technologies | MOSFET NCH 650V 54A PG-HDSOP-10 | - | 28573 | Details |
|
IPDD60R150G7XTMA1 | Infineon Technologies | MOSFET NCH 650V 45A PG-HDSOP-10 | - | 34631 | Details |
|
IPDD60R190G7XTMA1 | Infineon Technologies | MOSFET NCH 650V 36A PG-HDSOP-10 | - | 44447 | Details |