Images are for reference only.
See Product Specifications for product details.
| Part Number | BSC010N04LSIATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 37A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6200pF @ 20V |
| Vgs (Max) | ±20V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 2.5W (Ta), 139W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05 mOhm @ 50A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 FL |
| Package / Case | 8-PowerTDFN |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
BSC010N04LS6ATMA1 | Infineon Technologies | TRENCH 40V | - | 56873 | Details |
 |
BSC010N04LSATMA1 | Infineon Technologies | MOSFET N-CH 40V 100A TDSON-8 | - | 20000 | Details |
|
BSC010N04LSCATMA1 | Infineon Technologies | DIFFERENTIATED MOSFETS | - | 60854 | Details |
 |
BSC010N04LSIATMA1 | Infineon Technologies | MOSFET N-CH 40V 37A 8TDSON | 15000 | Details | |
|
BSC010N04LSTATMA1 | Infineon Technologies | DIFFERENTIATED MOSFETS | - | 48933 | Details |
 |
BSC010NE2LS | Infineon Technologies | MOSFET N-CH 25V 39A TDSON-8 | - | 35000 | Details |
 |
BSC010NE2LSATMA1 | Infineon Technologies | MOSFET N-CH 25V 39A TDSON-8 | - | 87725 | Details |
 |
BSC010NE2LSI | Infineon Technologies | MOSFET N-CH 25V 38A TDSON-8 | - | 25000 | Details |
 |
BSC010NE2LSIATMA1 | Infineon Technologies | MOSFET N-CH 25V 38A TDSON-8 | - | 81876 | Details |