EPC8004ENGR

TRANS GAN 40V 4.4A BUMPED DIE
EPC8004ENGR P1
EPC8004ENGR P1
Images are for reference only.
See Product Specifications for product details.

EPC ~ EPC8004ENGR

Part Number
EPC8004ENGR
Manufacturer
EPC
Description
TRANS GAN 40V 4.4A BUMPED DIE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
EPC8004ENGR.pdf EPC8004ENGR PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 0 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number EPC8004ENGR
Part Status Obsolete
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 4.4A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.36nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 45pF @ 20V
Vgs (Max) +6V, -5V
FET Feature -
Power Dissipation (Max) -
Rds On (Max) @ Id, Vgs 125 mOhm @ 500mA, 5V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die

Related Products

All Products