EPC8009

TRANS GAN 65V 2.7A BUMPED DIE
EPC8009 P1
EPC8009 P1
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EPC ~ EPC8009

Part Number
EPC8009
Manufacturer
EPC
Description
TRANS GAN 65V 2.7A BUMPED DIE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
EPC8009.pdf EPC8009 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 2500 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number EPC8009
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 65V
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.45nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 52pF @ 32.5V
Vgs (Max) +6V, -4V
FET Feature -
Power Dissipation (Max) -
Rds On (Max) @ Id, Vgs 130 mOhm @ 500mA, 5V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die

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