DMJ70H600SH3

MOSFET BVDSS: 651V 800V TO251
DMJ70H600SH3 P1
DMJ70H600SH3 P1
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Diodes Incorporated ~ DMJ70H600SH3

Part Number
DMJ70H600SH3
Manufacturer
Diodes Incorporated
Description
MOSFET BVDSS: 651V 800V TO251
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- DMJ70H600SH3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number DMJ70H600SH3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 643pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 113W (Tc)
Rds On (Max) @ Id, Vgs 600 mOhm @ 2.4A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251
Package / Case TO-251-3, IPak, Short Leads

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