DMJ70H1D3SI3

MOSFET N-CH 700V 4.6A TO251
DMJ70H1D3SI3 P1
DMJ70H1D3SI3 P1
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Diodes Incorporated ~ DMJ70H1D3SI3

Part Number
DMJ70H1D3SI3
Manufacturer
Diodes Incorporated
Description
MOSFET N-CH 700V 4.6A TO251
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- DMJ70H1D3SI3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 60 pcs
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Product Parameter

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Part Number DMJ70H1D3SI3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700V
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 351pF @ 50V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 41W (Tc)
Rds On (Max) @ Id, Vgs 1.3 Ohm @ 2.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251
Package / Case TO-251-3 Stub Leads, IPak

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