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| Número de pieza | ALD110908APAL |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | 2 N-Channel (Dual) Matched Pair |
| Característica FET | Standard |
| Drene a la fuente de voltaje (Vdss) | 10.6V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 12mA, 3mA |
| Rds On (Max) @ Id, Vgs | 500 Ohm @ 4.8V |
| Vgs (th) (Max) @ Id | 810mV @ 1µA |
| Carga de puerta (Qg) (Max) @ Vgs | - |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 2.5pF @ 5V |
| Potencia - Max | 500mW |
| Temperatura de funcionamiento | 0°C ~ 70°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete / caja | 8-DIP (0.300", 7.62mm) |
| Paquete de dispositivo del proveedor | 8-PDIP |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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ALD1101APAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8DIP | 0 | Detalles | |
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ALD1101ASAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8SOIC | 10 | Detalles | |
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ALD1101BPAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8DIP | 0 | Detalles | |
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ALD1101BSAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8SOIC | 0 | Detalles | |
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ALD1101PAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8DIP | 213 | Detalles | |
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ALD1101SAL | Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8SOIC | 95 | Detalles | |
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ALD1102APAL | Advanced Linear Devices Inc. | MOSFET 2P-CH 10.6V 8DIP | 51 | Detalles | |
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ALD1102ASAL | Advanced Linear Devices Inc. | MOSFET 2P-CH 10.6V 8SOIC | 151 | Detalles | |
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ALD1102BPAL | Advanced Linear Devices Inc. | MOSFET 2P-CH 10.6V 8DIP | 0 | Detalles | |
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ALD1102BSAL | Advanced Linear Devices Inc. | MOSFET 2P-CH 10.6V 8SOIC | 0 | Detalles | |
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ALD1102PAL | Advanced Linear Devices Inc. | MOSFET 2P-CH 10.6V 8DIP | 155 | Detalles | |
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ALD1102SAL | Advanced Linear Devices Inc. | MOSFET 2P-CH 10.6V 8SOIC | 70 | Detalles |