FDD2612

MOSFET N-CH 200V 4.9A D-PAK
FDD2612 P1
FDD2612 P2
FDD2612 P1
FDD2612 P2
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Fairchild/ON Semiconductor ~ FDD2612

Part Number
FDD2612
Manufacturer
Fairchild/ON Semiconductor
Description
MOSFET N-CH 200V 4.9A D-PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
FDD2612.pdf FDD2612 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number FDD2612
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4.9A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 234pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 42W (Ta)
Rds On (Max) @ Id, Vgs 720 mOhm @ 1.5A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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