TPC6006-H(TE85L,F)

MOSFET N-CH 40V 3.9A VS6 2-3T1A
TPC6006-H(TE85L,F) P1
TPC6006-H(TE85L,F) P2
TPC6006-H(TE85L,F) P1
TPC6006-H(TE85L,F) P2
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Toshiba Semiconductor and Storage ~ TPC6006-H(TE85L,F)

Part Number
TPC6006-H(TE85L,F)
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 40V 3.9A VS6 2-3T1A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- TPC6006-H(TE85L,F) PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number TPC6006-H(TE85L,F)
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 4.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 251pF @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Rds On (Max) @ Id, Vgs 75 mOhm @ 1.9A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package VS-6 (2.9x2.8)
Package / Case SOT-23-6 Thin, TSOT-23-6

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