HN1B01FU-Y(L,F,T)

TRANS NPN/PNP 50V 0.15A US6
HN1B01FU-Y(L,F,T) P1
HN1B01FU-Y(L,F,T) P1
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Toshiba Semiconductor and Storage ~ HN1B01FU-Y(L,F,T)

Part Number
HN1B01FU-Y(L,F,T)
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS NPN/PNP 50V 0.15A US6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- HN1B01FU-Y(L,F,T) PDF online browsing
Family
Transistors - Bipolar (BJT) - Arrays
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Product Parameter

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Part Number HN1B01FU-Y(L,F,T)
Part Status Active
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 150mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 6V
Power - Max 200mW
Frequency - Transition 120MHz
Operating Temperature 125°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6

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