RRS110N03TB1

MOSFET N-CH 30V 11A 8-SOIC
RRS110N03TB1 P1
RRS110N03TB1 P2
RRS110N03TB1 P1
RRS110N03TB1 P2
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Rohm Semiconductor ~ RRS110N03TB1

Part Number
RRS110N03TB1
Manufacturer
Rohm Semiconductor
Description
MOSFET N-CH 30V 11A 8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
RRS110N03TB1.pdf RRS110N03TB1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number RRS110N03TB1
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4V, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Rds On (Max) @ Id, Vgs 12.6 mOhm @ 11A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP
Package / Case 8-SOIC (0.154", 3.90mm Width)

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