RQ6E030ATTCR

MOSFET P-CH 30V 3A TSMT
RQ6E030ATTCR P1
RQ6E030ATTCR P1
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Rohm Semiconductor ~ RQ6E030ATTCR

Part Number
RQ6E030ATTCR
Manufacturer
Rohm Semiconductor
Description
MOSFET P-CH 30V 3A TSMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- RQ6E030ATTCR PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number RQ6E030ATTCR
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 15V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) -
Rds On (Max) @ Id, Vgs 91 mOhm @ 3A, 10V
Operating Temperature -
Mounting Type Surface Mount
Supplier Device Package TSMT6 (SC-95)
Package / Case SC-74, SOT-457

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