FCP190N65S3R0

MOSFET N-CH 650V 190MOHM TO220 I
FCP190N65S3R0 P1
FCP190N65S3R0 P1
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ON Semiconductor ~ FCP190N65S3R0

Part Number
FCP190N65S3R0
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 650V 190MOHM TO220 I
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FCP190N65S3R0 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 46161 pcs
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Product Parameter

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Part Number FCP190N65S3R0
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 400V
FET Feature -
Power Dissipation (Max) 144W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3

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