FCP190N60-GF102

MOSFET N-CH 600V TO-220-3
FCP190N60-GF102 P1
FCP190N60-GF102 P1
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See Product Specifications for product details.

ON Semiconductor ~ FCP190N60-GF102

Part Number
FCP190N60-GF102
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 600V TO-220-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FCP190N60-GF102 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 39094 pcs
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Product Parameter

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Part Number FCP190N60-GF102
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 199 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 25V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3

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