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Microsemi Corporation ~ 1N6628US/TR

Part Number	1N6628US/TR
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	2.3A
Voltage - Forward (Vf) (Max) @ If	1.5V @ 4A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	45ns
Current - Reverse Leakage @ Vr	2µA @ 600V
Capacitance @ Vr, F	40pF @ 10V, 1MHz
Mounting Type	Surface Mount
Package / Case	SQ-MELF, E
Supplier Device Package	D-5B
Operating Temperature - Junction	-65°C ~ 150°C

Part Number	Manufacturers	Description	PDF	In Stock	View
1N6620	Microsemi Corporation	DIODE GEN PURP 220V 1.2A AXIAL	-	0	Details
1N6620US	Microsemi Corporation	DIODE GEN PURP 220V 1.2A A-MELF	-	0	Details
1N6621	Microsemi Corporation	DIODE GEN PURP 440V 1.2A AXIAL	-	0	Details
1N6621US	Microsemi Corporation	DIODE GEN PURP 440V 1.2A A-MELF	-	425	Details
1N6621US/TR	Microsemi Corporation	UFRFRR	-	26994	Details
1N6622	Microsemi Corporation	DIODE GEN PURP 600V 1.2A AXIAL	-	159	Details
1N6622US	Microsemi Corporation	DIODE GEN PURP 660V 1.2A A-MELF	-	220	Details
1N6623	Microsemi Corporation	DIODE GEN PURP 880V 1A AXIAL	-	0	Details
1N6623US	Microsemi Corporation	DIODE GEN PURP 880V 1A A-MELF	-	0	Details
1N6624	Microsemi Corporation	DIODE GEN PURP 990V 1A A-PAK	-	0	Details
1N6624US	Microsemi Corporation	DIODE GEN PURP 990V 1A A-MELF	-	0	Details
1N6625	Microsemi Corporation	DIODE GEN PURP 1.1KV 1A AXIAL	-	0	Details