1N6622US

DIODE GEN PURP 660V 1.2A A-MELF
1N6622US P1
1N6622US P1
Images are for reference only.
See Product Specifications for product details.

Microsemi Corporation ~ 1N6622US

Part Number
1N6622US
Manufacturer
Microsemi Corporation
Description
DIODE GEN PURP 660V 1.2A A-MELF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- 1N6622US PDF online browsing
Family
Diodes - Rectifiers - Single
  • In Stock : 220 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number 1N6622US
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 660V
Current - Average Rectified (Io) 1.2A
Voltage - Forward (Vf) (Max) @ If 1.4V @ 1.2A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30ns
Current - Reverse Leakage @ Vr 500nA @ 660V
Capacitance @ Vr, F 10pF @ 10V, 1MHz
Mounting Type Surface Mount
Package / Case SQ-MELF, A
Supplier Device Package A-MELF
Operating Temperature - Junction -65°C ~ 150°C

Related Products

All Products