Images are for reference only.
See Product Specifications for product details.
| Part Number | IPD50R800CEBTMA1 |
|---|---|
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Rds On (Max) @ Id, Vgs | 800 mOhm @ 1.5A, 13V |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Gate Charge (Qg) (Max) @ Vgs | 12.4nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 100V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 40W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
IPD50R1K4CEAUMA1 | Infineon Technologies | MOSFET N-CH 500V 3.1A PG-TO-252 | 0 | Details | |
 |
IPD50R1K4CEBTMA1 | Infineon Technologies | MOSFET N-CH 500V 3.1A PG-TO-252 | - | 0 | Details |
 |
IPD50R280CE | Infineon Technologies | MOSFET N-CH 500V 13A PG-TO252 | 0 | Details | |
 |
IPD50R280CEATMA1 | Infineon Technologies | MOSFET N-CH 500V 13A PG-TO252 | 0 | Details | |
 |
IPD50R280CEAUMA1 | Infineon Technologies | MOSFET N-CH 550V 18.1A TO252 | 0 | Details | |
 |
IPD50R280CEBTMA1 | Infineon Technologies | MOSFET N-CH 500V 13A PG-TO252 | - | 12100 | Details |
 |
IPD50R2K0CEAUMA1 | Infineon Technologies | MOSFET N-CH 500V 2.4A PG-TO252 | 0 | Details | |
 |
IPD50R2K0CEBTMA1 | Infineon Technologies | CONSUMER | 0 | Details | |
 |
IPD50R380CE | Infineon Technologies | MOSFET N CH 500V 9.9A PG-TO252 | 0 | Details | |
 |
IPD50R380CEATMA1 | Infineon Technologies | MOSFET N CH 500V 9.9A PG-TO252 | 0 | Details | |
 |
IPD50R380CEAUMA1 | Infineon Technologies | MOSFET NCH 500V 14.1A TO252 | 0 | Details | |
 |
IPD50R380CEBTMA1 | Infineon Technologies | MOSFET N CH 500V 9.9A PG-TO252 | - | 6626 | Details |