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See Product Specifications for product details.
| Part Number | IPB034N06L3 G |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 93µA |
| Gate Charge (Qg) (Max) @ Vgs | 79nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000pF @ 30V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4 mOhm @ 90A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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IPB030N08N3 G | Infineon Technologies | MOSFET N-CH 80V 160A TO263-7 | - | 11000 | Details |
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IPB030N08N3GATMA1 | Infineon Technologies | MOSFET N-CH 80V 160A TO263-7 | - | 34620 | Details |
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IPB031N08N5ATMA1 | Infineon Technologies | MOSFET N-CH 80V TO263-3 | 1000 | Details | |
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IPB031NE7N3GATMA1 | Infineon Technologies | MOSFET N-CH 75V 100A TO263-3 | - | 0 | Details |
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IPB032N10N5ATMA1 | Infineon Technologies | DIFFERENTIATED MOSFETS | - | 0 | Details |
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IPB033N10N5LFATMA1 | Infineon Technologies | MOSFET N-CH 100V D2PAK-3 | 0 | Details | |
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IPB034N03L G | Infineon Technologies | MOSFET N-CH 30V 80A TO-263-3 | 0 | Details | |
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IPB034N03LGATMA1 | Infineon Technologies | MOSFET N-CH 30V 80A TO-263-3 | - | 82090 | Details |
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IPB034N06L3 G | Infineon Technologies | MOSFET N-CH 60V 90A TO263-3 | - | 2000 | Details |
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IPB034N06L3GATMA1 | Infineon Technologies | MOSFET N-CH 60V 90A TO263-3 | - | 80568 | Details |
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IPB034N06N3GATMA1 | Infineon Technologies | MOSFET N-CH 60V 100A TO263-7 | 0 | Details | |
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IPB035N08N3 G | Infineon Technologies | MOSFET N-CH 80V 100A TO263-3 | - | 0 | Details |