BSZ0909NSATMA1

MOSFET N-CH 34V 9A 8TSDSON
BSZ0909NSATMA1 P1
BSZ0909NSATMA1 P1
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Infineon Technologies ~ BSZ0909NSATMA1

Part Number
BSZ0909NSATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 34V 9A 8TSDSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BSZ0909NSATMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number BSZ0909NSATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 34V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 36A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1310pF @ 15V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs 12 mOhm @ 20A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerTDFN

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