BSO615CGHUMA1

MOSFET N/P-CH 60V 3.1A/2A 8SOIC
BSO615CGHUMA1 P1
BSO615CGHUMA1 P1
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Infineon Technologies ~ BSO615CGHUMA1

Part Number
BSO615CGHUMA1
Manufacturer
Infineon Technologies
Description
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BSO615CGHUMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 144041 pcs
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Product Parameter

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Part Number BSO615CGHUMA1
Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 3.1A, 2A
Rds On (Max) @ Id, Vgs 110 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 22.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package PG-DSO-8

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