HTNFET-D

MOSFET N-CH 55V 8-DIP
HTNFET-D P1
HTNFET-D P1
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Honeywell Microelectronics & Precision Sensors ~ HTNFET-D

Part Number
HTNFET-D
Manufacturer
Honeywell Microelectronics & Precision Sensors
Description
MOSFET N-CH 55V 8-DIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- HTNFET-D PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number HTNFET-D
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs(th) (Max) @ Id 2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 28V
Vgs (Max) 10V
FET Feature -
Power Dissipation (Max) 50W (Tj)
Rds On (Max) @ Id, Vgs 400 mOhm @ 100mA, 5V
Operating Temperature -55°C ~ 225°C (TJ)
Mounting Type Through Hole
Supplier Device Package 8-CDIP-EP
Package / Case 8-CDIP Exposed Pad

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