Images are for reference only.
See Product Specifications for product details.
| Part Number | CDBJSC10650-G |
|---|---|
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Current - Average Rectified (Io) | 10A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 10A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 100µA @ 650V |
| Capacitance @ Vr, F | 710pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 Full Pack |
| Supplier Device Package | TO-220F |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
|
CDBJSC101200-G | Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | 9193 | Details |
|
CDBJSC101700-G | Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | 1980 | Details |
|
CDBJSC10650-G | Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | 13663 | Details |
|
CDBJSC3650-G | Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | 40405 | Details |
|
CDBJSC51200-G | Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | 17599 | Details |
|
CDBJSC5650-G | Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | 26664 | Details |
|
CDBJSC8650-G | Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | 36425 | Details |