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BUL39D Bipolar Transistor Features and Applications

출시일 : 2019. 7. 29.

The BUL39D is an integrated anti-parallel collector - emitter diode with low dynamic propagation, high pressure capability, very high shut-off speed and reliable minimum batch-to-batch spread. The device uses high-voltage fabrication of high-epitaxial multilayer epitaxial planar technology to maintain speed while switching speed RBSOA. The device is designed for use in halogen electronic transformers.

 

feature

 

Integrated anti-parallel collector - emitter diode

High pressure capability

Low propagation of dynamic parameters

Minimum batch spacing for reliable operation

Extremely high switching speed

 

application

 

Halogen electronic transformer

Industry, power management, lighting

 

Internal schematic

 

BUL39D-internal-schematic

 

Absolute maximum rating

Symbol parameter value unit

VCES collector - emitter voltage (VBE = 0) 850 V.

VCEO collector - emitter voltage (IB = 0) 450 V.

VEBO emitter - base voltage (IC = 0) 9 V.

IC Collector is currently 4 A.

ICM collector peak current (tP <5 ms) 8 A.

IB reference current 2 A.

IBM Base peak current (tP <5 ms) 4 A.

Ptot's total dissipation of 70 W at Tc = 25 °C

Tstg storage temperature -65 to 150 ° C

TJ Max. Working junction temperature 150 ° C

 

Electrical characteristics table

 

Electrical characteristics table

Test circuit

Inductive load switch test circuit diagram

 

Test circuit

 

1) Fast electronic switch

2) Non-inductive resistance

3) Fast recovery rectifier

 

To meet environmental requirements, ST offers these kits with ECOPACK®. These packages have lead-free second level interconnects. The category second-level interconnect mark conforms to the JEDEC standard JESD97 on the package and internal box labels. The maximum ratings and soldering-related conditions are also marked on the inner box label.