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Ver especificaciones del producto para detalles del producto.
| Número de pieza | S5MBHM4G |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | - |
| Corriente - promedio rectificado (Io) | 5A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.1V @ 5A |
| Velocidad | Standard Recovery >500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | - |
| Current - Reverse Leakage @ Vr | 10µA @ 1000V |
| Capacitancia @ Vr, F | 40pF @ 4V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | DO-214AA, SMB |
| Paquete de dispositivo del proveedor | DO-214AA (SMB) |
| Temperatura de funcionamiento - unión | -55°C ~ 150°C |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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S5M M6G | Taiwan Semiconductor Corporation | DIODE GEN PURP 5A DO214AB | - | 404397 | Detalles |
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S5M R7G | Taiwan Semiconductor Corporation | DIODE GEN PURP 1KV 5A DO214AB | - | 356251 | Detalles |
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S5M V6G | Taiwan Semiconductor Corporation | DIODE GEN PURP 5A DO214AB | - | 561419 | Detalles |
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S5M V7G | Taiwan Semiconductor Corporation | DIODE GEN PURP 1KV 5A DO214AB | - | 449128 | Detalles |
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S5M-E3/57T | Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 5A DO214AB | - | 27200 | Detalles |
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S5M-E3/9AT | Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 5A DO214AB | - | 0 | Detalles |
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S5M-M3/57T | Vishay Semiconductor Diodes Division | DIODE GPP 5A 1000V DO-214AB | - | 0 | Detalles |
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S5M-M3/9AT | Vishay Semiconductor Diodes Division | DIODE GPP 5A 1000V DO-214AB | - | 0 | Detalles |
|
S5MB M4G | Taiwan Semiconductor Corporation | DIODE GEN PURP 5A DO214AA | - | 601792 | Detalles |
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S5MB R5G | Taiwan Semiconductor Corporation | DIODE GEN PURP 1KV 5A DO214AA | - | 481433 | Detalles |
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S5MBHM4G | Taiwan Semiconductor Corporation | DIODE GEN PURP 5A DO214AA | - | 564644 | Detalles |
|
S5MBHR5G | Taiwan Semiconductor Corporation | DIODE GEN PURP 5A DO214AA | - | 534926 | Detalles |