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| Número de pieza | S1GLR2G |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 400V |
| Corriente - promedio rectificado (Io) | 1A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.1V @ 1A |
| Velocidad | Standard Recovery >500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 1.8µs |
| Current - Reverse Leakage @ Vr | 5µA @ 400V |
| Capacitancia @ Vr, F | 9pF @ 4V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | DO-219AB |
| Paquete de dispositivo del proveedor | Sub SMA |
| Temperatura de funcionamiento - unión | -55°C ~ 175°C |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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S1G | Fairchild/ON Semiconductor | DIODE GEN PURP 400V 1A SMA | - | 832500 | Detalles |
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S1G M2G | Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 1A DO214AC | - | 1562148 | Detalles |
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S1G R3G | Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 1A DO214AC | - | 1041432 | Detalles |
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S1G-13 | Diodes Incorporated | DIODE GEN PURP 400V 1A SMA | 0 | Detalles | |
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S1G-13-F | Diodes Incorporated | DIODE GEN PURP 400V 1A SMA | - | 245000 | Detalles |
 |
S1G-E3/1 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 1A DO214AC | 0 | Detalles | |
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S1G-E3/5AT | Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 1A DO214AC | - | 0 | Detalles |
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S1G-E3/61T | Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 1A DO214AC | - | 0 | Detalles |
|
S1G-F | SMC Diode Solutions | SMT GLASS PASSIVATED RECTIFIER | - | 25825 | Detalles |
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S1G-JR2 | Taiwan Semiconductor Corporation | STANDARD RECOVERY RECTIFIER | - | 25814 | Detalles |
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S1G-JR3 | Taiwan Semiconductor Corporation | STANDARD RECOVERY RECTIFIER | - | 25814 | Detalles |
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S1G-KR2G | Taiwan Semiconductor Corporation | 1A 400V STANDARD RECOVERY RECT | - | 1769008 | Detalles |