APT75GN120B2G

IGBT 1200V 200A 833W TMAX
APT75GN120B2G P1
APT75GN120B2G P1
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Microsemi Corporation ~ APT75GN120B2G

Part Number
APT75GN120B2G
Manufacturer
Microsemi Corporation
Description
IGBT 1200V 200A 833W TMAX
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
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Family
Transistors - IGBTs - Single
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Product Parameter

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Part Number APT75GN120B2G
Part Status Not For New Designs
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 200A
Current - Collector Pulsed (Icm) 225A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Power - Max 833W
Switching Energy 8045µJ (on), 7640µJ (off)
Input Type Standard
Gate Charge 425nC
Td (on/off) @ 25°C 60ns/620ns
Test Condition 800V, 75A, 1 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Supplier Device Package -

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