Images are for reference only.
See Product Specifications for product details.
| Part Number | APT70GR120B2 |
|---|---|
| Part Status | Active |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 160A |
| Current - Collector Pulsed (Icm) | 280A |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 70A |
| Power - Max | 961W |
| Switching Energy | 3.82mJ (on), 2.58mJ (off) |
| Input Type | Standard |
| Gate Charge | 544nC |
| Td (on/off) @ 25°C | 33ns/278ns |
| Test Condition | 600V, 70A, 4.3 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
APT70GR120B2 | Microsemi Corporation | IGBT 1200V 160A 961W TO247 | - | 0 | Details |
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APT70GR120J | Microsemi Corporation | IGBT 1200V 112A 543W SOT227 | - | 0 | Details |
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APT70GR120JD60 | Microsemi Corporation | IGBT 1200V 112A 543W SOT227 | - | 16 | Details |
 |
APT70GR120L | Microsemi Corporation | IGBT 1200V 160A 961W TO264 | - | 45 | Details |
 |
APT70GR65B | Microsemi Corporation | IGBT 650V 134A 595W TO-247 | - | 52 | Details |
 |
APT70GR65B2DU40 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | - | 0 | Details |
|
APT70GR65B2SCD30 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | - | 0 | Details |
|
APT70SM70B | Microsemi Corporation | POWER MOSFET - SIC | - | 0 | Details |
|
APT70SM70J | Microsemi Corporation | POWER MOSFET - SIC | - | 0 | Details |
|
APT70SM70S | Microsemi Corporation | POWER MOSFET - SIC | - | 0 | Details |
 |
APT75DF170HJ | Microsemi Corporation | MOD DIODE 1700V SOT-227 | - | 0 | Details |
 |
APT75DL120HJ | Microsemi Corporation | MOD DIODE 1200V SOT-227 | - | 0 | Details |